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@ARTICLE{Kaul:1032177,
author = {Kaul, Prateek and Concepción, Omar and Wielens, Daan H.
and Zellekens, Patrick and Li, Chuan and Ikonic, Zoran and
Ishibashi, Koji and Zhao, Qing-Tai and Brinkman, Alexander
and Grützmacher, Detlev and Buca, Dan},
title = {{P}hase‐{C}oherent {T}ransport in {G}e{S}n {A}lloys on
{S}i},
journal = {Advanced electronic materials},
volume = {11},
number = {2},
issn = {2199-160X},
address = {Weinheim},
publisher = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
reportid = {FZJ-2024-06046},
pages = {2400565},
year = {2025},
abstract = {Germanium-Tin (GeSn) is a novel semiconductor Group IV
alloy that can be tuned from indirect to direct bandgap
semiconductors by adjusting the Sn content. This property
makes this alloy class attractive for integrated photonic
applications and high-mobility electronic devices. In this
work, the GeSn alloy properties are investigated in the view
of applications fields such as spintronics and quantum
computing. Using low-temperature magneto-transport
measurements, electron interference effects and deriving
typical mesoscopic benchmark parameters such as the
phase-coherence length in GeSn-based Hall bar structures for
Sn concentrations up to 14 $at.\%$ is investigated.
Furthermore, Shubnikov–de Haas oscillations provide direct
access to the effective mass of the Γ-valley electrons as
well as the charge carrier mobility. This work provides a
new insight into advanced group IV alloys desired for the
study of spin dynamics and its quantum computing
applications.},
cin = {PGI-9},
ddc = {621.3},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {5234 - Emerging NC Architectures (POF4-523)},
pid = {G:(DE-HGF)POF4-5234},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001357213800001},
doi = {10.1002/aelm.202400565},
url = {https://juser.fz-juelich.de/record/1032177},
}