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@ARTICLE{Yin:1032607,
      author       = {Yin, Hao and Hutter, Mark and Wagner, Christian and Tautz,
                      Frank Stefan and Bocquet, Francois C and Kumpf, Christian},
      title        = {{E}pitaxial growth of mono- and (twisted) multilayer
                      graphene on {S}i{C}(0001)},
      reportid     = {FZJ-2024-06375},
      year         = {2024},
      abstract     = {To take full advantage of twisted bilayers of graphene or
                      other two-dimensional materials, it is essential to
                      precisely control the twist angle between the stacked
                      layers, as this parameter determines the properties of the
                      heterostructure. In this context, a growth routine using
                      borazine as a surfactant molecule on SiC(0001) surfaces has
                      been reported, leading to the formation of high-quality
                      epitaxial graphene layers that are unconventionally
                      oriented, i.e., aligned with the substrate lattice (G-R0∘)
                      [Bocquet et al. Phys. Rev. Lett. 125, 106102 (2020)]. Since
                      the G-R0∘ layer sits on a buffer layer, also known as
                      zeroth-layer graphene (ZLG), which is rotated 30∘ with
                      respect to the SiC substrate and still covalently bonded to
                      it, decoupling the ZLG-R30∘ from the substrate can lead to
                      high-quality twisted bilayer graphene (tBLG). Here we report
                      the decoupling of ZLG-R30∘ by increasing the temperature
                      during annealing in a borazine atmosphere. While this
                      converts ZLG-R30∘ to G-R30∘ and thus produces tBLG, the
                      growth process at elevated temperature is no longer
                      self-limiting, so that the surface is covered by a patchwork
                      of graphene multilayers of different thicknesses. We find a
                      $20\%$ coverage of tBLG on ZLG, while on the rest of the
                      surface tBLG sits on one or more additional graphene layers.
                      In order to achieve complete coverage with tBLG only,
                      alternative ways of decoupling the ZLG, e.g., by
                      intercalation with suitable atoms, may be advantageous.},
      cin          = {PGI-3},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521)},
      pid          = {G:(DE-HGF)POF4-5213},
      typ          = {PUB:(DE-HGF)25},
      doi          = {10.34734/FZJ-2024-06375},
      url          = {https://juser.fz-juelich.de/record/1032607},
}