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@ARTICLE{Fischer:1033542,
      author       = {Fischer, Benedikt and Nuys, Maurice and Astakhov, Oleksandr
                      and Haas, Stefan and Schaaf, Michael and Besmehn, Astrid and
                      Jakes, Peter and Eichel, Rüdiger-A. and Rau, Uwe},
      title        = {{A}dvanced atmospheric pressure {CVD} of a-{S}i:{H} using
                      pure and cyclooctane-diluted trisilane as precursors},
      journal      = {Sustainable energy $\&$ fuels},
      volume       = {8},
      number       = {23},
      issn         = {2398-4902},
      address      = {Cambridge},
      publisher    = {Royal Society of Chemistry},
      reportid     = {FZJ-2024-06423},
      pages        = {5568 - 5580},
      year         = {2024},
      abstract     = {Liquid silanes can be used for low-cost, fast deposition of
                      hydrogenated amorphous silicon (a-Si:H) as an alternative to
                      state-of-the-art deposition processes such as plasma
                      enhanced chemical vapor deposition or electron beam
                      evaporation. However, liquid silane deposition techniques
                      are still in their infancy. In this paper, we present a new
                      version of the atmospheric pressure chemical vapor
                      deposition technique designed to improve the reproducibility
                      of a-Si:H deposition. With this new tool, we explore ways to
                      improve the quality of the material. The films can be
                      prepared using pure trisilane as a precursor; frequently,
                      however, trisilane is diluted with cyclooctane for better
                      handling and process control. Currently, the influence of
                      this dilution on the film quality is not well understood. In
                      our work, we investigate and compare both precursor
                      strategies. This paper presents a comprehensive analysis of
                      the effects of cyclooctane dilution, deposition temperature,
                      process duration, and precursor amount on the structure
                      stoichiometry and electronic properties of the resulting
                      films. The analysis was performed using a range of
                      techniques, including Fourier transform infrared
                      spectroscopy, electronic spin resonance spectroscopy, Raman
                      spectroscopy, ellipsometry, secondary ion mass spectrometry,
                      and conductivity measurements. For films deposited with pure
                      silane, we found a low oxygen (O) and carbon (C) impurity
                      incorporation and an adjustable H content up to $10\%,$
                      resulting in a photosensitivity of up to 104. Dependent on
                      the dilution and deposition temperature, the films deposited
                      with cyclooctane dilution showed various amounts of C
                      incorporation, culminating in an a-Si:H/a-SiC:H structure
                      for high temperatures and dilutions. High purity a-Si:H
                      films as a-Si:C:H films are promising for application in
                      solar cells and transistors either as an amorphous
                      functional layer or as a precursor for recrystallization
                      processes, e.g., in TOPCon solar cell technology.},
      cin          = {IMD-3 / ZEA-1 / IET-4 / IET-1},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IMD-3-20101013 / I:(DE-Juel1)ZEA-1-20090406 /
                      I:(DE-Juel1)IET-4-20191129 / I:(DE-Juel1)IET-1-20110218},
      pnm          = {1212 - Materials and Interfaces (POF4-121) / 1223 -
                      Batteries in Application (POF4-122)},
      pid          = {G:(DE-HGF)POF4-1212 / G:(DE-HGF)POF4-1223},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001344579800001},
      doi          = {10.1039/D4SE01308E},
      url          = {https://juser.fz-juelich.de/record/1033542},
}