%0 Journal Article
%A Seidel, Lukas
%A Liu, Teren
%A Concepción, Omar
%A Marzban, Bahareh
%A Kiyek, Vivien
%A Spirito, Davide
%A Schwarz, Daniel
%A Benkhelifa, Aimen
%A Schulze, Jörg
%A Ikonic, Zoran
%A Hartmann, Jean-Michel
%A Chelnokov, Alexei
%A Witzens, Jeremy
%A Capellini, Giovanni
%A Oehme, Michael
%A Grützmacher, Detlev
%A Buca, Dan
%T Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
%J Nature Communications
%V 15
%N 1
%@ 2041-1723
%C [London]
%I Nature Publishing Group UK
%M FZJ-2024-06709
%P 10502
%D 2024
%X Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
%F PUB:(DE-HGF)16
%9 Journal Article
%$ 39627224
%U <Go to ISI:>//WOS:001369778000020
%R 10.1038/s41467-024-54873-z
%U https://juser.fz-juelich.de/record/1033871