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024 7 _ |a 10.1038/s41467-024-54873-z
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100 1 _ |a Seidel, Lukas
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245 _ _ |a Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
260 _ _ |a [London]
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520 _ _ |a Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
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700 1 _ |a Liu, Teren
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700 1 _ |a Concepción, Omar
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700 1 _ |a Marzban, Bahareh
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700 1 _ |a Kiyek, Vivien
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700 1 _ |a Spirito, Davide
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700 1 _ |a Schwarz, Daniel
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700 1 _ |a Benkhelifa, Aimen
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700 1 _ |a Schulze, Jörg
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700 1 _ |a Ikonic, Zoran
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700 1 _ |a Hartmann, Jean-Michel
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700 1 _ |a Chelnokov, Alexei
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700 1 _ |a Witzens, Jeremy
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700 1 _ |a Capellini, Giovanni
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700 1 _ |a Oehme, Michael
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Buca, Dan
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773 _ _ |a 10.1038/s41467-024-54873-z
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