Home > Publications database > Modeling and simulation of bilayer area-dependent valence change memory devices
 
Dissertation / PhD Thesis FZJ-2024-07102
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Modeling and simulation of bilayer area-dependent valence change memory devices



2024

120 pp. () = Dissertation, RWTH Aachen, 2024


Note: Dissertation, RWTH Aachen, 2024
Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
  2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
  3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2024
Click to display QR Code for this record

The record appears in these collections:
JARA > JARA > JARA-JARA\-FIT
Document types > Theses > Ph.D. Theses
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2024-12-15, last modified 2024-12-16
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508-8-g6303aad
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English