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@ARTICLE{Yi:1034883,
      author       = {Yi, Changjiang and Peshcherenko, Nikolai and Zhou, Yishui
                      and Samanta, Kartik and Yang, Qun and Roychowdhury, Subhajit
                      and Yanda, Premakumar and Borrmann, Horst and Vergniory,
                      Maia G. and Zhang, Yang and Su, Yixi and Shekhar, Chandra
                      and Felser, Claudia},
      title        = {{L}arge topological {H}all effect in a chiral
                      antiferromagnet in hopping transport regime},
      journal      = {Physical review research},
      volume       = {6},
      number       = {4},
      issn         = {2643-1564},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2025-00006},
      pages        = {043295},
      year         = {2024},
      abstract     = {The combination of structural chirality and magnetism leads
                      to the formation of spin chirality through noncoplanar
                      magnetic structures, resulting in unusual electronic
                      transport properties. The spin chirality generates nonzero
                      Berry curvature in real space, acting as an emergent
                      magnetic field and contributing to the unconventional
                      anomalous Hall effect, known as the geometrical or
                      topological Hall effect (THE). This study unveils the
                      remarkable occurrence of THE in a chiral antiferromagnetic
                      (AFM) semiconductor Eu⁢Ir2⁢P2 in the hopping regime. It
                      exhibits a complex incommensurately spiral AFM ground state
                      due to its chiral crystalline structure, providing fertile
                      ground for the emergence of topologically nontrivial spin
                      textures such as skyrmions. A substantial THE is observed
                      under finite magnetic fields, making Eu⁢Ir2⁢P2 an
                      exceptional case within the ultralow-conductivity hopping
                      regime for investigating the interplay between topologically
                      nontrivial magnetic structures and hopping carriers. Owing
                      to its semiconducting nature, we have formulated a
                      theoretical model based on Mott's variable range-hopping
                      mechanism, effectively elucidating the temperature and
                      magnetic field-dependent behavior of THE. Eu⁢Ir2⁢P2 thus
                      serves as an ideal candidate for comprehending transport
                      properties in the hopping regime and offers a unique
                      opportunity for the implementation of AFM
                      semiconductor-based spintronic devices.},
      cin          = {JCNS-FRM-II / JCNS-ILL / JCNS-4},
      ddc          = {530},
      cid          = {I:(DE-Juel1)JCNS-FRM-II-20110218 /
                      I:(DE-Juel1)JCNS-ILL-20110128 / I:(DE-Juel1)JCNS-4-20201012},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (FZJ) (POF4-6G4)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G4},
      experiment   = {EXP:(DE-MLZ)External-20140101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001390423900001},
      doi          = {10.1103/PhysRevResearch.6.043295},
      url          = {https://juser.fz-juelich.de/record/1034883},
}