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@TECHREPORT{Maksumov:1035413,
      author       = {Maksumov, Muzaffar and Schierholz, Roland},
      title        = {{F}ocused {I}on {B}eam/{E}lectrochemistry {D}ay 2024},
      number       = {1},
      reportid     = {FZJ-2025-00460, 1},
      pages        = {23},
      year         = {2024},
      note         = {Electrochemistry Day 2024},
      abstract     = {Focused Ion BeamFocused Ion Beam (FIB) technology has
                      become a crucial tool in microfabrication, microelectronics,
                      and materials science due to its ability to precisely modify
                      materials at the micro and nanoscale. FIB systems may
                      produce sub-micron sized ion beams, such as gallium, using
                      liquid metal ion sources. These beams can be used for
                      sputtering, deposition, implantation, and etching.FIB
                      technology operates by focusing a beam of ions onto a target
                      surface and produces a variety of interactions such as
                      sputtering of surface atoms and implantation of ions. This
                      capability enables highly localized material modifications,
                      which are essential for advanced fabrication processes. The
                      development of high-brightness ion sources and sophisticated
                      ion optics has greatly improved the precision and
                      functionality of FIB systems, making them essential in
                      modern technological applications [1]. FIB is widely
                      employed in semiconductor device manufacturing for various
                      applications, including mask repair, circuit modification,
                      and failure analysis. This technology enables direct,
                      maskless lithography by selectively sputtering material to
                      form patterns with sub-micron precision [2]. The maskless
                      method streamlines the fabrication process and improves the
                      accuracy of doping and implantation in semiconductor devices
                      [3]. FIB's capability to repair photomasks and integrated
                      circuits through precise material addition or removal has
                      been essential in preserving functionality and prolonging
                      the lifespan of semiconductor devices [4].In material
                      science, FIB is used for the nanoscale characterization and
                      modification of materials. It enables the creation of
                      cross-sections, providing detailed analysis of
                      microstructures and interfaces [5]. Furthermore, FIB-induced
                      deposition and etching processes enable to fabricate complex
                      nanostructures and devices without relying on traditional
                      lithographic techniques [6].Figure 1. a) schematic of
                      ion-solid interactions; b) dual-beam FIB; c) FIB
                      cross-section; d) FIB cross-section of corroded copper
                      [8-9].The application of FIB technology in biology has
                      transformed nanoscale cellular imaging and manipulation. FIB
                      can be used to prepare ultra-thin lamellae of biological
                      samples for transmission electron microscopy (TEM), enabling
                      high-resolution imaging of cellular structures [7].
                      Additionally, FIB technology is also integrated with
                      Scanning Electron Microscopy (SEM) to improve imaging and
                      sample preparation capabilities. Dual-beam systems that
                      integrate FIB and SEM provide a robust platform for
                      site-specific sample preparation and high-resolution
                      imaging.This combination allows for precise material removal
                      with FIB and detailed imaging with SEM, facilitating
                      comprehensive analyses of microstructures and interfaces
                      [8]. The FIB-SEM systems are especially valuable for
                      preparing samples for TEM analysis and conducting
                      three-dimensional reconstructions of micro and
                      nanostructures [9-11].The versatility and precision of FIB
                      technology have resulted in its widespread use across
                      various fields, including semiconductor device fabrication
                      and imaging. FIB technology is a fundamental to the progress
                      of microfabrication and nanotechnology. Its capability to
                      precisely manipulate materials at microscopic and nanoscopic
                      scales has extensive applications in semiconductor
                      manufacturing, materials science, and biological research.
                      As FIB technology continues to advance, its applications are
                      anticipated to grow further, driving innovations in various
                      scientific and industrial sectors.Summarizing Questions1.How
                      does the principle of ion-sample interaction in FIB systems
                      enable both imaging and accurate material modification?2.In
                      materials science and semiconductor fabrication, what are
                      the main applications of FIB technology?3.How might FIB
                      technology be combined with other analytical methods to
                      improve the capabilities for nanoscale fabrication and
                      characterization?References:1.Orloff, J., Utlaut, M., $\&$
                      Swanson, L. (2003). High Resolution Focused Ion Beams: FIB
                      and its Applications. Springer2.Melngailis, J. (1987).
                      Focused ion beam technology and applications. Journal of
                      Vacuum Science $\&$ Technology B, 5, 469-495.3.Gamo, K.
                      (1991). Focused ion beam technology. Vacuum, 42,
                      89-93.4.Banerjee, I., $\&$ Livengood, R. (1993).
                      Applications of focused ion beams. Journal of The
                      Electrochemical Society, 140, 183-188.5.Langford, R.,
                      Nellen, P., Giérak, J., $\&$ Fu, Y. (2007). Focused Ion
                      Beam Micro- and Nanoengineering. Mrs Bulletin, 32,
                      417-423.6.Moore, D., Daniel, J., $\&$ Walker, J. (1997).
                      Nano- and micro-technology applications of focused ion beam
                      processing. Microelectronics Journal, 28, 465-473.7.Narayan,
                      K., $\&$ Subramaniam, S. (2015). Focused ion beams in
                      biology. Nature Methods, 12, 1021-1031.8.Young, R., $\&$
                      Moore, M. (2005). Dual-Beam (FIB-SEM) Systems. Springer,
                      247-268.9.Goldstein, J., Newbury, D., Michael, J., Ritchie,
                      N., Scott, J. H., $\&$ Joy, D. (2018). Focused Ion Beam
                      Applications in the SEM Laboratory.10.Grandfield, K., $\&$
                      Engqvist, H. (2012). Focused ion beam in the study of
                      biomaterials and biological matter. Advances in Materials
                      Science and Engineering, 2012, 841961.11.Bell, D. C. (2009).
                      Scanning Electron Microscopy: Focused Ion Beam Applications.
                      Springer.},
      cin          = {IET-1},
      cid          = {I:(DE-Juel1)IET-1-20110218},
      pnm          = {1223 - Batteries in Application (POF4-122) / DFG project
                      G:(GEPRIS)493705276 - Kontrolle des Degradationsverhaltens
                      von perowskitischen OER-Katalysatoren unter dynamischen
                      Operationsbedingungen durch operando-Charakterisierung und
                      systematischer Variation der d-Orbital-Bandstruktur
                      (493705276)},
      pid          = {G:(DE-HGF)POF4-1223 / G:(GEPRIS)493705276},
      typ          = {PUB:(DE-HGF)15},
      url          = {https://juser.fz-juelich.de/record/1035413},
}