%0 Journal Article
%A Şaşıoğlu, E.
%A Tas, M.
%A Ghosh, Sumit
%A Beida, Wejdan
%A Sanyal, B.
%A Blügel, Stefan
%A Mertig, I.
%A Galanakis, I.
%T Spin gapped metals: A novel class of materials for multifunctional spintronic devices
%J Journal of magnetism and magnetic materials
%V 615
%@ 0304-8853
%C Amsterdam
%I North-Holland Publ. Co.
%M FZJ-2025-00950
%P 172792 -
%D 2025
%X Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: ”spin gapped metals”. These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001407571100001
%R 10.1016/j.jmmm.2025.172792
%U https://juser.fz-juelich.de/record/1037798