TY  - JOUR
AU  - Şaşıoğlu, E.
AU  - Tas, M.
AU  - Ghosh, Sumit
AU  - Beida, Wejdan
AU  - Sanyal, B.
AU  - Blügel, Stefan
AU  - Mertig, I.
AU  - Galanakis, I.
TI  - Spin gapped metals: A novel class of materials for multifunctional spintronic devices
JO  - Journal of magnetism and magnetic materials
VL  - 615
SN  - 0304-8853
CY  - Amsterdam
PB  - North-Holland Publ. Co.
M1  - FZJ-2025-00950
SP  - 172792 -
PY  - 2025
AB  - Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: ”spin gapped metals”. These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001407571100001
DO  - DOI:10.1016/j.jmmm.2025.172792
UR  - https://juser.fz-juelich.de/record/1037798
ER  -