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@ARTICLE{aolu:1037798,
      author       = {Şaşıoğlu, E. and Tas, M. and Ghosh, Sumit and Beida,
                      Wejdan and Sanyal, B. and Blügel, Stefan and Mertig, I. and
                      Galanakis, I.},
      title        = {{S}pin gapped metals: {A} novel class of materials for
                      multifunctional spintronic devices},
      journal      = {Journal of magnetism and magnetic materials},
      volume       = {615},
      issn         = {0304-8853},
      address      = {Amsterdam},
      publisher    = {North-Holland Publ. Co.},
      reportid     = {FZJ-2025-00950},
      pages        = {172792 -},
      year         = {2025},
      abstract     = {Gapped metals, a recently proposed class of materials,
                      possess a band gap slightly above or below the Fermi level,
                      behaving as intrinsic p- or n-type semiconductors without
                      requiring external doping. Inspired by this concept, we
                      propose a novel material class: ”spin gapped metals”.
                      These materials exhibit intrinsic p- or n-type character
                      independently for each spin channel, similar to dilute
                      magnetic semiconductors but without the need for transition
                      metal doping. A key advantage of spin gapped metals lies in
                      the absence of band tails that exist within the band gap of
                      conventional p- and n-type semiconductors. Band tails
                      degrade the performance of devices like tunnel field-effect
                      transistors (causing high subthreshold slopes) and negative
                      differential resistance tunnel diodes (resulting in low
                      peak-to-valley current ratios). Here, we demonstrate the
                      viability of spin gapped metals using first-principles
                      electronic band structure calculations on half-Heusler
                      compounds. Our analysis reveals compounds displaying both
                      gapped metal and spin gapped metal behavior, paving the way
                      for next-generation multifunctional devices in spintronics
                      and nanoelectronics.},
      cin          = {PGI-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106},
      pnm          = {5211 - Topological Matter (POF4-521) / Pilotprojekt zur
                      Entwicklung eines palästinensisch-deutschen Forschungs- und
                      Promotionsprogramms 'Palestinian-German Science Bridge'
                      (01DH16027) / SFB 1238 C01 - Strukturinversionsasymmetrische
                      Materie und Spin-Orbit-Phänomene mittels ab initio (C01)
                      (319898210)},
      pid          = {G:(DE-HGF)POF4-5211 / G:(BMBF)01DH16027 /
                      G:(GEPRIS)319898210},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001407571100001},
      doi          = {10.1016/j.jmmm.2025.172792},
      url          = {https://juser.fz-juelich.de/record/1037798},
}