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100 1 _ |a Şaşıoğlu, E.
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245 _ _ |a Spin gapped metals: A novel class of materials for multifunctional spintronic devices
260 _ _ |a Amsterdam
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520 _ _ |a Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: ”spin gapped metals”. These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics.
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536 _ _ |a SFB 1238 C01 - Strukturinversionsasymmetrische Materie und Spin-Orbit-Phänomene mittels ab initio (C01) (319898210)
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700 1 _ |a Tas, M.
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700 1 _ |a Ghosh, Sumit
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700 1 _ |a Beida, Wejdan
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700 1 _ |a Sanyal, B.
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700 1 _ |a Blügel, Stefan
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700 1 _ |a Mertig, I.
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700 1 _ |a Galanakis, I.
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773 _ _ |a 10.1016/j.jmmm.2025.172792
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|t Journal of magnetism and magnetic materials
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910 1 _ |a Institute of Physics, Martin Luther University Halle-Wittenberg, 06120, Halle (Saale), Germany
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910 1 _ |a Department of Physics, Gebze Technical University, 41400 Kocaeli, Turkey
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910 1 _ |a Department of Materials Science, School of Natural Sciences, University of Patras, 26504, Patras, Greece
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