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@ARTICLE{Wu:1038100,
      author       = {Wu, Kui and Kindel, Sebastian and Descamps, Thomas and
                      Hangleiter, Tobias and Müller, Jan Christoph and Rodrigo,
                      Rebecca and Merget, Florian and Kardynal, Beata E. and
                      Bluhm, Hendrik and Witzens, Jeremy},
      title        = {{M}odeling an efficient
                      singlet-triplet-spin-qubit-to-photon interface assisted by a
                      photonic crystal cavity},
      journal      = {Physical review applied},
      volume       = {21},
      number       = {5},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2025-01147},
      pages        = {054052},
      year         = {2024},
      abstract     = {Efficient interconnection between distant semiconductor
                      spin qubits with the help of photonic qubits offers exciting
                      new prospects for future quantum communication applications.
                      In this paper, we optimize the extraction efficiency of a
                      novel interface between a singlet-triplet-spin-qubit and a
                      photonic-qubit. The interface is based on a 220-nm-thick
                      Ga⁢As/(Al,Ga)⁢As heterostructure membrane and consists
                      of a gate-defined double quantum dot (GDQD) supporting a
                      singlet-triplet qubit, an optically active quantum dot
                      (OAQD) consisting of a gate-defined exciton trap, a photonic
                      crystal cavity providing in-plane optical confinement,
                      efficient outcoupling to an ideal free-space Gaussian beam
                      while accommodating the gate wiring of the GDQD and OAQD,
                      and a bottom gold reflector to recycle photons and increase
                      the optical extraction efficiency. All the essential
                      components can be lithographically defined and
                      deterministically fabricated on the Ga⁢As/(Al,Ga)⁢As
                      heterostructure membrane, which greatly increases the
                      scalability of on-chip integration. According to our
                      simulations, the interface provides an overall coupling
                      efficiency of $28.7\%$ into a free-space Gaussian beam,
                      assuming a Si⁢O2 interlayer fills the space between the
                      reflector and the membrane. The performance can be further
                      increased by undercutting this Si⁢O2 interlayer below the
                      photonic crystal. In this case, the overall efficiency is
                      calculated to be $48.5\%.$},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5224 - Quantum Networking (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5224},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001235418000003},
      doi          = {10.1103/PhysRevApplied.21.054052},
      url          = {https://juser.fz-juelich.de/record/1038100},
}