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@ARTICLE{Yu:1038894,
      author       = {Yu, Jiaao and Manea, Paul and Hizzani, Mohammad and Ameli
                      Kalkhouran, Sara and Strachan, John Paul},
      title        = {{A} {M}emristor {V}ariation-{A}ware {A}nalog {M}emristor
                      {P}rogramming {C}ircuit for {A}ssociative {M}emories},
      journal      = {2024 31st IEEE International Conference on Electronics,
                      Circuits and Systems (ICECS)},
      volume       = {4},
      publisher    = {IEEE},
      reportid     = {FZJ-2025-01705},
      pages        = {1-4},
      year         = {2024},
      abstract     = {In the emerging realm such as in-memory computing and
                      associative memories, the application of memristors
                      necessitates the development of high-performance programming
                      circuits for effective weight updates. The conventional
                      Program-Verify (PV) method requires complex memory
                      peripherals and data converters, which is a major bottleneck
                      for area and power efficiency. Moreover, memristor
                      variability critically undermines the efficacy of AI
                      applications utilizing memristive technology. Addressing
                      these challenges, this paper introduces a novel analog
                      memristor programming circuit that takes memristor
                      variations into account. Leveraging the TSMC 28nm process
                      PDK and the JART VCM vlb var memristor model for
                      simulations, our circuit achieves ±1 µS error margin for
                      over $98.5\%$ of programming results without using ADCs.
                      When contrasted with preceding studies, the proposed
                      solution not only reduces the programming settling time by
                      $15.0\%$ to $87.5\%$ but also exhibits comparable
                      performance to the PV method designed with the same
                      semiconductor and memristor technology.},
      month         = {Nov},
      date          = {2024-11-18},
      organization  = {2024 31st IEEE International
                       Conference on Electronics, Circuits and
                       Systems (ICECS), Nancy (France), 18 Nov
                       2024 - 20 Nov 2024},
      cin          = {PGI-14},
      cid          = {I:(DE-Juel1)PGI-14-20210412},
      pnm          = {5234 - Emerging NC Architectures (POF4-523) / 5233 -
                      Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234 / G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)16},
      UT           = {WOS:001445799800062},
      doi          = {10.1109/ICECS61496.2024.10848806},
      url          = {https://juser.fz-juelich.de/record/1038894},
}