% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Tossoun:1038895,
      author       = {Tossoun, Bassem and Liang, Di and Cheung, Stanley and Fang,
                      Zhuoran and Sheng, Xia and Strachan, John Paul and
                      Beausoleil, Raymond G.},
      title        = {{H}igh-speed and energy-efficient non-volatile silicon
                      photonic memory based on heterogeneously integrated
                      memresonator},
      journal      = {Nature Communications},
      volume       = {15},
      number       = {1},
      issn         = {2041-1723},
      address      = {[London]},
      publisher    = {Springer Nature},
      reportid     = {FZJ-2025-01706},
      pages        = {551},
      year         = {2024},
      abstract     = {Recently, interest in programmable photonics integrated
                      circuits has grown as a potential hardware framework for
                      deep neural networks, quantum computing, and field
                      programmable arrays (FPGAs). However, these circuits are
                      constrained by the limited tuning speed and large power
                      consumption of the phase shifters used. In this paper, we
                      introduce the memresonator, a metal-oxide memristor
                      heterogeneously integrated with a microring resonator, as a
                      non-volatile silicon photonic phase shifter. These devices
                      are capable of retention times of 12 hours, switching
                      voltages lower than 5 V, and an endurance of 1000
                      switching cycles. Also, these memresonators have been
                      switched using 300 ps long voltage pulses with a record
                      low switching energy of 0.15 pJ. Furthermore, these
                      memresonators are fabricated on a heterogeneous III-V-on-Si
                      platform capable of integrating a rich family of active and
                      passive optoelectronic devices directly on-chip to enable
                      in-memory photonic computing and further advance the
                      scalability of integrated photonic processors.},
      cin          = {PGI-14},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-14-20210412},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {38228602},
      UT           = {WOS:001147728500002},
      doi          = {10.1038/s41467-024-44773-7},
      url          = {https://juser.fz-juelich.de/record/1038895},
}