%0 Journal Article
%A Lee, J.H.
%A Ke, X.
%A Misra, R.
%A Ihlefeld, J.F.
%A Xu, X.S.
%A Mei, Z.G.
%A Heeg, T.
%A Roeckerath, M.
%A Schubert, J.
%A Liu, Z.K.
%A Musfeldt, J.L.
%A Schiffer, P.
%A Schlom, D.G.
%T Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy
%J Applied physics letters
%V 96
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-10394
%P 262905
%D 2010
%Z We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404 ) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT)
%X We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786]
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000279514400051
%R 10.1063/1.3457786
%U https://juser.fz-juelich.de/record/10394