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000010394 0247_ $$2DOI$$a10.1063/1.3457786
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000010394 084__ $$2WoS$$aPhysics, Applied
000010394 1001_ $$0P:(DE-HGF)0$$aLee, J.H.$$b0
000010394 245__ $$aAdsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy
000010394 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000010394 300__ $$a262905
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000010394 440_0 $$0562$$aApplied Physics Letters$$v96$$x0003-6951$$y26
000010394 500__ $$aWe gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404 ) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT)
000010394 520__ $$aWe have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786]
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000010394 65320 $$2Author$$aabsorption coefficients
000010394 65320 $$2Author$$abismuth compounds
000010394 65320 $$2Author$$aenergy gap
000010394 65320 $$2Author$$amagnetic epitaxial layers
000010394 65320 $$2Author$$amolecular beam epitaxial growth
000010394 65320 $$2Author$$amultiferroics
000010394 65320 $$2Author$$aX-ray diffraction
000010394 650_7 $$2WoSType$$aJ
000010394 7001_ $$0P:(DE-HGF)0$$aKe, X.$$b1
000010394 7001_ $$0P:(DE-HGF)0$$aMisra, R.$$b2
000010394 7001_ $$0P:(DE-HGF)0$$aIhlefeld, J.F.$$b3
000010394 7001_ $$0P:(DE-HGF)0$$aXu, X.S.$$b4
000010394 7001_ $$0P:(DE-HGF)0$$aMei, Z.G.$$b5
000010394 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b6
000010394 7001_ $$0P:(DE-Juel1)VDB64142$$aRoeckerath, M.$$b7$$uFZJ
000010394 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8$$uFZJ
000010394 7001_ $$0P:(DE-HGF)0$$aLiu, Z.K.$$b9
000010394 7001_ $$0P:(DE-HGF)0$$aMusfeldt, J.L.$$b10
000010394 7001_ $$0P:(DE-HGF)0$$aSchiffer, P.$$b11
000010394 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b12
000010394 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3457786$$gVol. 96, p. 262905$$p262905$$q96<262905$$tApplied physics letters$$v96$$x0003-6951$$y2010
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