TY  - JOUR
AU  - Lee, J.H.
AU  - Ke, X.
AU  - Misra, R.
AU  - Ihlefeld, J.F.
AU  - Xu, X.S.
AU  - Mei, Z.G.
AU  - Heeg, T.
AU  - Roeckerath, M.
AU  - Schubert, J.
AU  - Liu, Z.K.
AU  - Musfeldt, J.L.
AU  - Schiffer, P.
AU  - Schlom, D.G.
TI  - Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy
JO  - Applied physics letters
VL  - 96
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-10394
SP  - 262905
PY  - 2010
N1  - We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404 ) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT)
AB  - We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000279514400051
DO  - DOI:10.1063/1.3457786
UR  - https://juser.fz-juelich.de/record/10394
ER  -