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@ARTICLE{Lee:10394,
      author       = {Lee, J.H. and Ke, X. and Misra, R. and Ihlefeld, J.F. and
                      Xu, X.S. and Mei, Z.G. and Heeg, T. and Roeckerath, M. and
                      Schubert, J. and Liu, Z.K. and Musfeldt, J.L. and Schiffer,
                      P. and Schlom, D.G.},
      title        = {{A}dsorption-controlled growth of {B}i{M}n{O}3 thin films
                      by molecular-beam epitaxy},
      journal      = {Applied physics letters},
      volume       = {96},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-10394},
      pages        = {262905},
      year         = {2010},
      note         = {We gratefully acknowledge the financial support from the
                      National Science Foundation through Grant No. DMR-0507146
                      and the MRSEC program (Grant No. DMR-0820404 ) and from the
                      U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT)},
      abstract     = {We have developed the means to grow BiMnO3 thin films with
                      unparalleled structural perfection by reactive
                      molecular-beam epitaxy and determined its band gap. Film
                      growth occurs in an adsorption-controlled growth regime.
                      Within this growth window bounded by oxygen pressure and
                      substrate temperature at a fixed bismuth overpressure,
                      single-phase films of the metastable perovskite BiMnO3 may
                      be grown by epitaxial stabilization. X-ray diffraction
                      reveals phase-pure and epitaxial films with omega rocking
                      curve full width at half maximum values as narrow as 11 arc
                      sec (0.003 degrees). Optical absorption measurements reveal
                      that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C)
                      2010 American Institute of Physics. [doi:
                      10.1063/1.3457786]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279514400051},
      doi          = {10.1063/1.3457786},
      url          = {https://juser.fz-juelich.de/record/10394},
}