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| 001 | 10394 | ||
| 005 | 20200423202758.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3457786 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Lee, J.H. |b 0 |
| 245 | _ | _ | |a Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 262905 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 96 |x 0003-6951 |y 26 |
| 500 | _ | _ | |a We gratefully acknowledge the financial support from the National Science Foundation through Grant No. DMR-0507146 and the MRSEC program (Grant No. DMR-0820404 ) and from the U.S. DOE through Grant No. DE-FG02-01-ER45885 (UT) |
| 520 | _ | _ | |a We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 degrees). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1 +/- 0.1 eV. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457786] |
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| 653 | 2 | 0 | |2 Author |a absorption coefficients |
| 653 | 2 | 0 | |2 Author |a bismuth compounds |
| 653 | 2 | 0 | |2 Author |a energy gap |
| 653 | 2 | 0 | |2 Author |a magnetic epitaxial layers |
| 653 | 2 | 0 | |2 Author |a molecular beam epitaxial growth |
| 653 | 2 | 0 | |2 Author |a multiferroics |
| 653 | 2 | 0 | |2 Author |a X-ray diffraction |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Ke, X. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Misra, R. |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Ihlefeld, J.F. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Xu, X.S. |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Mei, Z.G. |b 5 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Heeg, T. |b 6 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB64142 |a Roeckerath, M. |b 7 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 8 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Liu, Z.K. |b 9 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Musfeldt, J.L. |b 10 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schiffer, P. |b 11 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schlom, D.G. |b 12 |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3457786 |g Vol. 96, p. 262905 |p 262905 |q 96<262905 |t Applied physics letters |v 96 |x 0003-6951 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3457786 |
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