Conference Presentation (Invited)

FZJ-2025-01905

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Template-Assisted Synthesis of Fe3O4 Nanodots for High-Density Resistive Switching Memory

XU, Y. ; BEDNARSKI-MEINKE, C.FZJ* ; WANG, E. ; QDEMAT, A.FZJ* ; Kentzinger, E.FZJ* ; GUNKEL, F. ; DITTMANN, R. ; LIU, Y.-P. ; PETRACIC, O. ; Hussein, M.FZJ*

2025

Abstract: The growing demand for high-density memory solutions has driven the exploration of innovative fabrication techniques. We introduce a bottom-up approach for synthesizing ordered Fe3O4 nanodots for nanoscale resistive switching memory applications. Using anodic aluminum oxide (AAO) templates as masks, Fe3O4 nanodots on Nb:SrTiO3 substrate were fabricated via pulsed laser deposition. Scanning electron microscopy (SEM) confirms the nanodots’ uniformity. Grazing incidence X-ray scattering (GISAXS) reveals a high degree of long-range ordering. Magnetometry measurements show that the Verwey transition temperature (TV) and coercivity are preserved compared to continuous thin films. Conductive atomic force microscopy (cAFM) confirms well-defined nanodots using current maps. By sweeping the voltage on a single nanodot, set and reset processes are observed within ±2V.

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Contributing Institute(s):

1. Streumethoden (JCNS-2)
2. JARA-FIT (JARA-FIT)
3. Elektronische Materialien (PGI-7)

Research Program(s):

1. 632 - Materials – Quantum, Complex and Functional Materials (POF4-632) (POF4-632)
2. 6G4 - Jülich Centre for Neutron Research (JCNS) (FZJ) (POF4-6G4) (POF4-6G4)

Appears in the scientific report 2025

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