%0 Journal Article
%A Kordoš, Peter
%A Gregušová, Dagmar
%A Mikulics, Martin
%A Hardtdegen, Hilde
%T Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
%J AIP Advances
%V 15
%N 2
%@ 2158-3226
%C New York, NY
%I American Inst. of Physics
%M FZJ-2025-01941
%P 025028
%D 2025
%X The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001429134700004
%R 10.1063/5.0252024
%U https://juser.fz-juelich.de/record/1040574