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001040574 1001_ $$0P:(DE-HGF)0$$aKordoš, Peter$$b0
001040574 245__ $$aCutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
001040574 260__ $$aNew York, NY$$bAmerican Inst. of Physics$$c2025
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001040574 520__ $$aThe RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.
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001040574 7001_ $$0P:(DE-HGF)0$$aGregušová, Dagmar$$b1$$eCorresponding author
001040574 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b2$$ufzj
001040574 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b3$$ufzj
001040574 773__ $$0PERI:(DE-600)2583909-3$$a10.1063/5.0252024$$gVol. 15, no. 2, p. 025028$$n2$$p025028$$tAIP Advances$$v15$$x2158-3226$$y2025
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