TY  - JOUR
AU  - Kordoš, Peter
AU  - Gregušová, Dagmar
AU  - Mikulics, Martin
AU  - Hardtdegen, Hilde
TI  - Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
JO  - AIP Advances
VL  - 15
IS  - 2
SN  - 2158-3226
CY  - New York, NY
PB  - American Inst. of Physics
M1  - FZJ-2025-01941
SP  - 025028
PY  - 2025
AB  - The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001429134700004
DO  - DOI:10.1063/5.0252024
UR  - https://juser.fz-juelich.de/record/1040574
ER  -