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@ARTICLE{Kordo:1040574,
author = {Kordoš, Peter and Gregušová, Dagmar and Mikulics, Martin
and Hardtdegen, Hilde},
title = {{C}utoff frequency increase of gate recessed
{A}l{G}a{N}/{G}a{N} {MISHFET}s with amorphous {A}l{N}
insulator},
journal = {AIP Advances},
volume = {15},
number = {2},
issn = {2158-3226},
address = {New York, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2025-01941},
pages = {025028},
year = {2025},
abstract = {The RF performance of gate recessed MISHFET devices with an
amorphous AlN layer was investigated by small-signal
(S-parameter) measurements. They reveal current gain and
unilateral power gain cutoff frequencies of 125 and 138 GHz,
respectively. These device parameters were achieved for gate
recessed MISHFET devices after applying a selective “step
by step” etching T-gate formation procedure. The results
indicate that the combination of an amorphous AlN dielectric
layer with the gate recessed AlGaN/GaN MISHFET structures
affects the RF performance in devices prepared for high
frequency operation advantageously.},
cin = {ER-C-2},
ddc = {530},
cid = {I:(DE-Juel1)ER-C-2-20170209},
pnm = {5353 - Understanding the Structural and Functional Behavior
of Solid State Systems (POF4-535)},
pid = {G:(DE-HGF)POF4-5353},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001429134700004},
doi = {10.1063/5.0252024},
url = {https://juser.fz-juelich.de/record/1040574},
}