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@ARTICLE{Kordo:1040574,
      author       = {Kordoš, Peter and Gregušová, Dagmar and Mikulics, Martin
                      and Hardtdegen, Hilde},
      title        = {{C}utoff frequency increase of gate recessed
                      {A}l{G}a{N}/{G}a{N} {MISHFET}s with amorphous {A}l{N}
                      insulator},
      journal      = {AIP Advances},
      volume       = {15},
      number       = {2},
      issn         = {2158-3226},
      address      = {New York, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2025-01941},
      pages        = {025028},
      year         = {2025},
      abstract     = {The RF performance of gate recessed MISHFET devices with an
                      amorphous AlN layer was investigated by small-signal
                      (S-parameter) measurements. They reveal current gain and
                      unilateral power gain cutoff frequencies of 125 and 138 GHz,
                      respectively. These device parameters were achieved for gate
                      recessed MISHFET devices after applying a selective “step
                      by step” etching T-gate formation procedure. The results
                      indicate that the combination of an amorphous AlN dielectric
                      layer with the gate recessed AlGaN/GaN MISHFET structures
                      affects the RF performance in devices prepared for high
                      frequency operation advantageously.},
      cin          = {ER-C-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001429134700004},
      doi          = {10.1063/5.0252024},
      url          = {https://juser.fz-juelich.de/record/1040574},
}