Home > Publications database > Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator > print

001     1040574
005     20250414120456.0
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100 1 _ |a Kordoš, Peter
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245 _ _ |a Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
260 _ _ |a New York, NY
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|b American Inst. of Physics
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520 _ _ |a The RF performance of gate recessed MISHFET devices with an amorphous AlN layer was investigated by small-signal (S-parameter) measurements. They reveal current gain and unilateral power gain cutoff frequencies of 125 and 138 GHz, respectively. These device parameters were achieved for gate recessed MISHFET devices after applying a selective “step by step” etching T-gate formation procedure. The results indicate that the combination of an amorphous AlN dielectric layer with the gate recessed AlGaN/GaN MISHFET structures affects the RF performance in devices prepared for high frequency operation advantageously.
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700 1 _ |a Gregušová, Dagmar
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700 1 _ |a Mikulics, Martin
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700 1 _ |a Hardtdegen, Hilde
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773 _ _ |a 10.1063/5.0252024
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856 4 _ |u https://juser.fz-juelich.de/record/1040574/files/025028_1_5.0252024.pdf
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