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@ARTICLE{Waser:10410,
      author       = {Waser, R. and Dittmann, R. and Salinga, M. and Wuttig, M.},
      title        = {{F}unction by defects at the atomic scale - {N}ew concepts
                      for non-volatile memories},
      journal      = {Solid state electronics},
      volume       = {54},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {PreJuSER-10410},
      pages        = {830 - 840},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A survey of non-volatile. highly scalable memory devices
                      which utilize dedicated resistive switching phenomena in
                      nanoscale chalcogenide-based memory cells is presented. We
                      introduce the basic operation principle of the phase change
                      mechanism, the thermochemical mechanism, and the valence
                      change mechanism and we discuss the crucial role of
                      structural defects in the switching processes. We show how
                      this role is determined by the atomic structure of the
                      defects, the electronic defect states, and/or the ion
                      transport properties of the defects. The electronic
                      structure of the systems in different resistance states is
                      described in the light of the chemical bonds involved. While
                      for phase-change alloys the interplay of ionicity and
                      hybridization in the crystalline and in the amorphous phase
                      determine the resistances, the local redox reaction at the
                      site of extended defects, the change in the oxygen
                      stoichiometry, and the resulting change in the occupancy of
                      relevant orbitals play the major role in the thermochemical
                      and the valence change mechanism. Phase transformations are
                      not only discussed for phase-change alloys but also for both
                      other types of switching processes. The switching kinetics
                      as well as the ultimate scalability of switching cells is
                      related to structural defects in the materials. (C) 2010
                      Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000280322300004},
      doi          = {10.1016/j.sse.2010.04.043},
      url          = {https://juser.fz-juelich.de/record/10410},
}