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@ARTICLE{Yin:1041427,
      author       = {Yin, Hao and Hutter, Mark and Wagner, Christian and Tautz,
                      F. Stefan and Bocquet, François C. and Kumpf, Christian},
      title        = {{E}pitaxial growth of mono- and (twisted) multilayer
                      graphene on {S}i{C}(0001)},
      journal      = {Physical review materials},
      volume       = {9},
      number       = {4},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2025-02240},
      pages        = {044003},
      year         = {2025},
      abstract     = {To take full advantage of twisted bilayers of graphene or
                      other two-dimensional materials, it is essential toprecisely
                      control the twist angle between the stacked layers, as this
                      parameter determines the properties of theheterostructure.
                      In this context, a growth routine using borazine as a
                      surfactant molecule on SiC(0001) surfaceshas been reported,
                      leading to the formation of high-quality epitaxial graphene
                      layers that are unconventionallyoriented, i.e., aligned with
                      the substrate lattice (G-R0◦ ) [Bocquet et al. Phys. Rev.
                      Lett. 125, 106102 (2020)].Since the G-R0◦ layer sits on a
                      buffer layer, also known as zeroth-layer graphene (ZLG),
                      which is rotated 30◦ withrespect to the SiC substrate and
                      still covalently bonded to it, decoupling the ZLG-R30◦
                      from the substrate canlead to high-quality twisted bilayer
                      graphene (tBLG). Here, we report the decoupling of
                      ZLG-R30◦ by increasingthe temperature during annealing in
                      a borazine atmosphere. While this converts ZLG-R30◦ to
                      G-R30◦ and thusproduces tBLG, the growth process at
                      elevated temperature is no longer self-limiting, so that the
                      surface iscovered by a patchwork of graphene multilayers of
                      different thicknesses. We find a $20\%$ coverage of tBLG
                      onZLG, while on the rest of the surface tBLG sits on one or
                      more additional graphene layers. In order to achievecomplete
                      coverage with tBLG only, alternative ways of decoupling the
                      ZLG, e.g., by intercalation with suitableatoms, may be
                      advantageous.},
      cin          = {PGI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521) / SFB 1083 A12 -
                      Struktur und Anregungen von hetero-epitaktischen
                      Schichtsystemen aus schwach wechselwirkenden 2D-Materialien
                      und molekularen Schichten (A12) (385975694)},
      pid          = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)385975694},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001469031200001},
      doi          = {10.1103/PhysRevMaterials.9.044003},
      url          = {https://juser.fz-juelich.de/record/1041427},
}