Hauptseite > Publikationsdatenbank > Epitaxial growth of mono- and (twisted) multilayer graphene on SiC(0001) > print

001     1041427
005     20250512115734.0
024 7 _ |a 10.1103/PhysRevMaterials.9.044003
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082 _ _ |a 530
100 1 _ |a Yin, Hao
|0 P:(DE-Juel1)164856
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245 _ _ |a Epitaxial growth of mono- and (twisted) multilayer graphene on SiC(0001)
260 _ _ |a College Park, MD
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520 _ _ |a To take full advantage of twisted bilayers of graphene or other two-dimensional materials, it is essential toprecisely control the twist angle between the stacked layers, as this parameter determines the properties of theheterostructure. In this context, a growth routine using borazine as a surfactant molecule on SiC(0001) surfaceshas been reported, leading to the formation of high-quality epitaxial graphene layers that are unconventionallyoriented, i.e., aligned with the substrate lattice (G-R0◦ ) [Bocquet et al. Phys. Rev. Lett. 125, 106102 (2020)].Since the G-R0◦ layer sits on a buffer layer, also known as zeroth-layer graphene (ZLG), which is rotated 30◦ withrespect to the SiC substrate and still covalently bonded to it, decoupling the ZLG-R30◦ from the substrate canlead to high-quality twisted bilayer graphene (tBLG). Here, we report the decoupling of ZLG-R30◦ by increasingthe temperature during annealing in a borazine atmosphere. While this converts ZLG-R30◦ to G-R30◦ and thusproduces tBLG, the growth process at elevated temperature is no longer self-limiting, so that the surface iscovered by a patchwork of graphene multilayers of different thicknesses. We find a 20% coverage of tBLG onZLG, while on the rest of the surface tBLG sits on one or more additional graphene layers. In order to achievecomplete coverage with tBLG only, alternative ways of decoupling the ZLG, e.g., by intercalation with suitableatoms, may be advantageous.
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536 _ _ |a SFB 1083 A12 - Struktur und Anregungen von hetero-epitaktischen Schichtsystemen aus schwach wechselwirkenden 2D-Materialien und molekularen Schichten (A12) (385975694)
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700 1 _ |a Hutter, Mark
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700 1 _ |a Wagner, Christian
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700 1 _ |a Tautz, F. Stefan
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700 1 _ |a Bocquet, François C.
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700 1 _ |a Kumpf, Christian
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773 _ _ |a 10.1103/PhysRevMaterials.9.044003
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856 4 _ |u https://juser.fz-juelich.de/record/1041427/files/PhysRevMaterials.9.044003.pdf
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