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@ARTICLE{Tilgner:1041523,
      author       = {Tilgner, Niclas and Wolff, Susanne and Soubatch, Serguei
                      and Lee, Tien-Lin and Göhler, Fabian and Tautz, Frank
                      Stefan and Seyller, Thomas and Schädlich, Philip and Kumpf,
                      Christian},
      title        = {{S}olving the {P}hase {P}roblem of {D}iffraction:{X}-ray
                      {S}tanding {W}aves {I}maging on {B}ismuthene/{S}i{C}(0001)},
      reportid     = {FZJ-2025-02297},
      year         = {2025},
      abstract     = {The phase retrieval problem is a fundamental shortcoming of
                      all diffraction-based methods, arising from theinability to
                      measure the phase of scattered waves. The (normal incidence)
                      X-ray standing wave (NIXSW) techniquecircumvents this issue
                      by introducing a (Bragg-generated) X-ray standing wave field
                      throughout the sample, rela-tive to which any atomic species
                      can be localized by probing its fluorescence or
                      photoelectron yield. In essence,in a single measurement the
                      complex scattering factor (i.e., its amplitude and phase)
                      corresponding to the usedBragg reflection is determined.
                      Performing this for multiple Bragg reflections enables one
                      to reconstruct the scat-tering density of the sample in
                      three dimensions, straightforwardly as the Fourier sum of
                      all measured (complex)scattering factors. Here, we utilize
                      this technique to reveal the structural key features
                      involved in the formation ofthe quantum spin Hall insulator
                      bismuthene on silicon carbide. In this prominent example,
                      the two-dimensional Bilayer is confined between a 4H-SiC
                      substrate crystal and an epitaxial graphene layer. The key
                      finding is a changein the adsorption site of the Bi atoms
                      underneath the graphene upon hydrogenation, caused by the
                      H-saturation ofone (out of three) Si dangling bonds per unit
                      cell. This structural change, clearly revealed by our NIXSW
                      imagingexperiment, is the key feature leading to the
                      formation of the characteristic band structure of the 2D
                      bismuthenehoneycomb.},
      cin          = {PGI-3},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521) / SFB 1083 A12 -
                      Struktur und Anregungen von hetero-epitaktischen
                      Schichtsystemen aus schwach wechselwirkenden 2D-Materialien
                      und molekularen Schichten (A12) (385975694)},
      pid          = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)385975694},
      typ          = {PUB:(DE-HGF)25},
      doi          = {10.48550/arXiv.2504.11413},
      url          = {https://juser.fz-juelich.de/record/1041523},
}