Home > Publications database > Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001) > print

001     1041558
005     20250423202218.0
024 7 _ |a 10.48550/ARXIV.2111.08926
|2 doi
037 _ _ |a FZJ-2025-02315
100 1 _ |a Lin, You-Ron
|0 P:(DE-Juel1)173990
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245 _ _ |a Vertical structure of Sb-intercalated quasifreestanding graphene on SiC(0001)
260 _ _ |c 2021
|b arXiv
336 7 _ |a Preprint
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336 7 _ |a Electronic Article
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336 7 _ |a preprint
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336 7 _ |a ARTICLE
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336 7 _ |a Output Types/Working Paper
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520 _ _ |a Using the normal incidence x-ray standing wave technique as well as low energy electron microscopy we have investigated the structure of quasi-freestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the $\left(6\sqrt{3}\times6\sqrt{3}\right)R30^\circ$ reconstructed graphitized 6H-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is mono-atomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.
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650 _ 7 |a Materials Science (cond-mat.mtrl-sci)
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700 1 _ |a Wolff, Susanne
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700 1 _ |a Schädlich, Philip
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700 1 _ |a Hutter, Mark
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700 1 _ |a Soubatch, Serguei
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700 1 _ |a Lee, Tien-Lin
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700 1 _ |a Tautz, Frank Stefan
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700 1 _ |a Seyller, Thomas
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700 1 _ |a Kumpf, Christian
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700 1 _ |a Bocquet, François C.
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|e Corresponding author
773 _ _ |a 10.48550/ARXIV.2111.08926
909 C O |o oai:juser.fz-juelich.de:1041558
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