TY  - EJOUR
AU  - Lin, You-Ron
AU  - Franke, Markus
AU  - Parhizkar, Shayan
AU  - Raths, Miriam
AU  - Yu, Victor Wen-zhe
AU  - Lee, Tien-Lin
AU  - Soubatch, Serguei
AU  - Blum, Volker
AU  - Tautz, F. Stefan
AU  - Kumpf, Christian
AU  - Bocquet, François C.
TI  - Boron nitride on SiC(0001)
PB  - arXiv
M1  - FZJ-2025-02319
PY  - 2022
AB  - In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0$^\circ$ layer is aligned with the SiC lattice, and hence represents an important milestone towards high quality twisted bilayer graphene (tBLG), a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find -- in contrast to the literature -- that this template layer is a hexagonal B$_x$N$_y$ layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0$^\circ$ orientation of the B$_x$N$_y$ template layer upon annealing.
KW  - Materials Science (cond-mat.mtrl-sci) (Other)
KW  - FOS: Physical sciences (Other)
LB  - PUB:(DE-HGF)25
DO  - DOI:10.48550/ARXIV.2203.00985
UR  - https://juser.fz-juelich.de/record/1041580
ER  -