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@ARTICLE{Lin:1041580,
author = {Lin, You-Ron and Franke, Markus and Parhizkar, Shayan and
Raths, Miriam and Yu, Victor Wen-zhe and Lee, Tien-Lin and
Soubatch, Serguei and Blum, Volker and Tautz, F. Stefan and
Kumpf, Christian and Bocquet, François C.},
title = {{B}oron nitride on {S}i{C}(0001)},
publisher = {arXiv},
reportid = {FZJ-2025-02319},
year = {2022},
abstract = {In the field of van der Waals heterostructures, the twist
angle between stacked two-dimensional (2D) layers has been
identified to be of utmost importance for the properties of
the heterostructures. In this context, we previously
reported the growth of a single layer of unconventionally
oriented epitaxial graphene that forms in a surfactant
atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125,
106102 (2020)]. The resulting G-R0$^\circ$ layer is aligned
with the SiC lattice, and hence represents an important
milestone towards high quality twisted bilayer graphene
(tBLG), a frequently investigated model system in this
field. Here, we focus on the surface structures obtained in
the same surfactant atmosphere, but at lower preparation
temperatures at which a boron nitride template layer forms
on SiC(0001). In a comprehensive study based on
complementary experimental and theoretical techniques, we
find -- in contrast to the literature -- that this template
layer is a hexagonal B$_x$N$_y$ layer, but not high-quality
hBN. It is aligned with the SiC lattice and gradually
replaced by low-quality graphene in the 0$^\circ$
orientation of the B$_x$N$_y$ template layer upon
annealing.},
keywords = {Materials Science (cond-mat.mtrl-sci) (Other) / FOS:
Physical sciences (Other)},
cin = {PGI-3},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {5213 - Quantum Nanoscience (POF4-521)},
pid = {G:(DE-HGF)POF4-5213},
typ = {PUB:(DE-HGF)25},
doi = {10.48550/ARXIV.2203.00985},
url = {https://juser.fz-juelich.de/record/1041580},
}