Home > Publications database > Boron nitride on SiC(0001) > print

001     1041580
005     20250423202218.0
024 7 _ |a 10.48550/ARXIV.2203.00985
|2 doi
037 _ _ |a FZJ-2025-02319
100 1 _ |a Lin, You-Ron
|0 P:(DE-Juel1)173990
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245 _ _ |a Boron nitride on SiC(0001)
260 _ _ |c 2022
|b arXiv
336 7 _ |a Preprint
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336 7 _ |a WORKING_PAPER
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336 7 _ |a Electronic Article
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336 7 _ |a preprint
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336 7 _ |a ARTICLE
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520 _ _ |a In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional (2D) layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet, et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0$^\circ$ layer is aligned with the SiC lattice, and hence represents an important milestone towards high quality twisted bilayer graphene (tBLG), a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find -- in contrast to the literature -- that this template layer is a hexagonal B$_x$N$_y$ layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0$^\circ$ orientation of the B$_x$N$_y$ template layer upon annealing.
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588 _ _ |a Dataset connected to DataCite
650 _ 7 |a Materials Science (cond-mat.mtrl-sci)
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650 _ 7 |a FOS: Physical sciences
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700 1 _ |a Franke, Markus
|0 P:(DE-Juel1)161374
|b 1
700 1 _ |a Parhizkar, Shayan
|0 P:(DE-HGF)0
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700 1 _ |a Raths, Miriam
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700 1 _ |a Yu, Victor Wen-zhe
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700 1 _ |a Lee, Tien-Lin
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700 1 _ |a Soubatch, Serguei
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700 1 _ |a Blum, Volker
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700 1 _ |a Tautz, F. Stefan
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700 1 _ |a Kumpf, Christian
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700 1 _ |a Bocquet, François C.
|0 P:(DE-HGF)0
|b 10
|e Corresponding author
773 _ _ |a 10.48550/ARXIV.2203.00985
856 4 _ |u https://arxiv.org/abs/2203.00985
909 C O |o oai:juser.fz-juelich.de:1041580
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980 _ _ |a UNRESTRICTED

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