Home > Publications database > Lifting the spin-momentum locking in ultra-thin topological insulator films > print |
001 | 1041583 | ||
005 | 20250423202218.0 | ||
024 | 7 | _ | |a 10.48550/ARXIV.2106.06217 |2 doi |
037 | _ | _ | |a FZJ-2025-02322 |
100 | 1 | _ | |a Leis, Arthur |0 P:(DE-Juel1)168208 |b 0 |
245 | _ | _ | |a Lifting the spin-momentum locking in ultra-thin topological insulator films |
260 | _ | _ | |c 2021 |b arXiv |
336 | 7 | _ | |a Preprint |b preprint |m preprint |0 PUB:(DE-HGF)25 |s 1745392973_24519 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a WORKING_PAPER |2 ORCID |
336 | 7 | _ | |a Electronic Article |0 28 |2 EndNote |
336 | 7 | _ | |a preprint |2 DRIVER |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a Output Types/Working Paper |2 DataCite |
520 | _ | _ | |a Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the topological surface states at the top and bottom surfaces results in a topological quantum phase transition, which can lead to the emergence of a quantum spin Hall phase. Here, we study the thickness-dependent transport properties across the quantum phase transition on the example of (Bi$_{0.16}$Sb$_{0.84}$)$_2$Te$_3$ films, with a four-tip scanning tunnelling microscope. Our findings reveal an exponential drop of the conductivity below the critical thickness. The steepness of this drop indicates the presence of spin-conserving backscattering between the top and bottom surface states, effectively lifting the spin-momentum locking and resulting in the opening of a gap at the Dirac point. Our experiments provide crucial steps towards the detection of quantum spin Hall states in transport measurements. |
536 | _ | _ | |a 5213 - Quantum Nanoscience (POF4-521) |0 G:(DE-HGF)POF4-5213 |c POF4-521 |f POF IV |x 0 |
588 | _ | _ | |a Dataset connected to DataCite |
650 | _ | 7 | |a Mesoscale and Nanoscale Physics (cond-mat.mes-hall) |2 Other |
650 | _ | 7 | |a FOS: Physical sciences |2 Other |
700 | 1 | _ | |a Schleenvoigt, Michael |0 P:(DE-Juel1)171405 |b 1 |u fzj |
700 | 1 | _ | |a Cherepanov, Vasily |0 P:(DE-Juel1)128762 |b 2 |u fzj |
700 | 1 | _ | |a Lüpke, Felix |0 P:(DE-Juel1)162163 |b 3 |u fzj |
700 | 1 | _ | |a Schüffelgen, Peter |0 P:(DE-Juel1)165984 |b 4 |u fzj |
700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 5 |u fzj |
700 | 1 | _ | |a Grützmacher, Detlev |0 P:(DE-Juel1)125588 |b 6 |u fzj |
700 | 1 | _ | |a Voigtländer, Bert |0 P:(DE-Juel1)128794 |b 7 |e Corresponding author |u fzj |
700 | 1 | _ | |a Tautz, F. Stefan |0 P:(DE-Juel1)128791 |b 8 |u fzj |
773 | _ | _ | |a 10.48550/ARXIV.2106.06217 |
856 | 4 | _ | |u https://arxiv.org/abs/2106.06217 |
909 | C | O | |o oai:juser.fz-juelich.de:1041583 |p VDB |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)171405 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128762 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)162163 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)165984 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128617 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)125588 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)128794 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)128791 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-521 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Quantum Materials |9 G:(DE-HGF)POF4-5213 |x 0 |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-3-20110106 |k PGI-3 |l Quantum Nanoscience |x 0 |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 1 |
980 | _ | _ | |a preprint |
980 | _ | _ | |a VDB |
980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
980 | _ | _ | |a UNRESTRICTED |
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