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000010419 0247_ $$2DOI$$a10.1039/c0jm00363h
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000010419 084__ $$2WoS$$aChemistry, Physical
000010419 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000010419 1001_ $$0P:(DE-HGF)0$$aMyllymäki, P.$$b0
000010419 245__ $$aRare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size
000010419 260__ $$aLondon$$bChemSoc$$c2010
000010419 300__ $$a4207 - 4212
000010419 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000010419 440_0 $$013161$$aJournal of Materials Chemistry$$v20$$x0959-9428
000010419 500__ $$aRecord converted from VDB: 12.11.2012
000010419 520__ $$aA series of amorphous REScO3 films was deposited by atomic layer deposition (ALD) using rare earth (RE) beta-diketonate precursors RE(thd)(3) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) together with ozone in an attempt to study the effect of the RE3+ cation size on various film properties. A clear correlation between the deposition rate and the RE3+ cation radius was established. REScO3 films with a metal ratio RE : Sc =1, close to the stoichiometric one, viz. RE : Sc 1, and a small excess of oxygen were realized by adjusting the metal precursor pulsing ratio. Small amount of carbon was found as impurity in all the films, concentrations varying from 1-3 at% (RE = La, Gd or Dy) to 0.4-0.5 at% (RE = Er or Lu). Also the crystallization temperature and the resulting phase were affected by the RE3+ cation size. The REScO3 films were found to crystallize either as an orthorhombic perovskite phase or as a solid solution of the cubic C-type oxides. High crystallization temperatures of 800-900 degrees C were observed for LaScO3, GdScO3 and DyScO3. All the films gave smooth C-V curves with very small hysteresis (typically < 35 mV). The highest dielectric constant (kappa approximate to 24) was found for DyScO3. Also the leakage current densities were small, typically in a range of 10(-6)-10(-9) A cm(-2) at 1 V. The results confirm that REScO3 films deposited by ALD are potential candidates for new generation high-kappa gate dielectrics.
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000010419 7001_ $$0P:(DE-Juel1)VDB64142$$aRoeckerath, M.$$b1$$uFZJ
000010419 7001_ $$0P:(DE-Juel1)VDB64746$$aLopes, J. M. J.$$b2$$uFZJ
000010419 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b3$$uFZJ
000010419 7001_ $$0P:(DE-HGF)0$$aMizohata, K.$$b4
000010419 7001_ $$0P:(DE-HGF)0$$aPutkonen, M.$$b5
000010419 7001_ $$0P:(DE-HGF)0$$aNiinistö, L.$$b6
000010419 773__ $$0PERI:(DE-600)1491403-7$$a10.1039/c0jm00363h$$gVol. 20, p. 4207 - 4212$$p4207 - 4212$$q20<4207 - 4212$$tJournal of materials chemistry$$v20$$x0959-9428$$y2010
000010419 8567_ $$uhttp://dx.doi.org/10.1039/c0jm00363h
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000010419 9141_ $$y2010
000010419 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000010419 9201_ $$0I:(DE-Juel1)VDB799$$d31.12.2010$$gIBN$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
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