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@ARTICLE{Myllymki:10419,
      author       = {Myllymäki, P. and Roeckerath, M. and Lopes, J. M. J. and
                      Schubert, J. and Mizohata, K. and Putkonen, M. and
                      Niinistö, L.},
      title        = {{R}are earth scandate thin films by atomic layer
                      deposition: effect of the rare earth cation size},
      journal      = {Journal of materials chemistry},
      volume       = {20},
      issn         = {0959-9428},
      address      = {London},
      publisher    = {ChemSoc},
      reportid     = {PreJuSER-10419},
      pages        = {4207 - 4212},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A series of amorphous REScO3 films was deposited by atomic
                      layer deposition (ALD) using rare earth (RE) beta-diketonate
                      precursors RE(thd)(3) (thd =
                      2,2,6,6-tetramethyl-3,5-heptanedionato) together with ozone
                      in an attempt to study the effect of the RE3+ cation size on
                      various film properties. A clear correlation between the
                      deposition rate and the RE3+ cation radius was established.
                      REScO3 films with a metal ratio RE : Sc =1, close to the
                      stoichiometric one, viz. RE : Sc 1, and a small excess of
                      oxygen were realized by adjusting the metal precursor
                      pulsing ratio. Small amount of carbon was found as impurity
                      in all the films, concentrations varying from 1-3 $at\%$ (RE
                      = La, Gd or Dy) to 0.4-0.5 $at\%$ (RE = Er or Lu). Also the
                      crystallization temperature and the resulting phase were
                      affected by the RE3+ cation size. The REScO3 films were
                      found to crystallize either as an orthorhombic perovskite
                      phase or as a solid solution of the cubic C-type oxides.
                      High crystallization temperatures of 800-900 degrees C were
                      observed for LaScO3, GdScO3 and DyScO3. All the films gave
                      smooth C-V curves with very small hysteresis (typically < 35
                      mV). The highest dielectric constant (kappa approximate to
                      24) was found for DyScO3. Also the leakage current densities
                      were small, typically in a range of 10(-6)-10(-9) A cm(-2)
                      at 1 V. The results confirm that REScO3 films deposited by
                      ALD are potential candidates for new generation high-kappa
                      gate dielectrics.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000277563800025},
      doi          = {10.1039/c0jm00363h},
      url          = {https://juser.fz-juelich.de/record/10419},
}