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001     10419
005     20180208224520.0
024 7 _ |2 DOI
|a 10.1039/c0jm00363h
024 7 _ |2 WOS
|a WOS:000277563800025
037 _ _ |a PreJuSER-10419
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
100 1 _ |a Myllymäki, P.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size
260 _ _ |a London
|b ChemSoc
|c 2010
300 _ _ |a 4207 - 4212
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of Materials Chemistry
|x 0959-9428
|0 13161
|v 20
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a A series of amorphous REScO3 films was deposited by atomic layer deposition (ALD) using rare earth (RE) beta-diketonate precursors RE(thd)(3) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) together with ozone in an attempt to study the effect of the RE3+ cation size on various film properties. A clear correlation between the deposition rate and the RE3+ cation radius was established. REScO3 films with a metal ratio RE : Sc =1, close to the stoichiometric one, viz. RE : Sc 1, and a small excess of oxygen were realized by adjusting the metal precursor pulsing ratio. Small amount of carbon was found as impurity in all the films, concentrations varying from 1-3 at% (RE = La, Gd or Dy) to 0.4-0.5 at% (RE = Er or Lu). Also the crystallization temperature and the resulting phase were affected by the RE3+ cation size. The REScO3 films were found to crystallize either as an orthorhombic perovskite phase or as a solid solution of the cubic C-type oxides. High crystallization temperatures of 800-900 degrees C were observed for LaScO3, GdScO3 and DyScO3. All the films gave smooth C-V curves with very small hysteresis (typically < 35 mV). The highest dielectric constant (kappa approximate to 24) was found for DyScO3. Also the leakage current densities were small, typically in a range of 10(-6)-10(-9) A cm(-2) at 1 V. The results confirm that REScO3 films deposited by ALD are potential candidates for new generation high-kappa gate dielectrics.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Roeckerath, M.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB64142
700 1 _ |a Lopes, J. M. J.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB64746
700 1 _ |a Schubert, J.
|b 3
|u FZJ
|0 P:(DE-Juel1)128631
700 1 _ |a Mizohata, K.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Putkonen, M.
|b 5
|0 P:(DE-HGF)0
700 1 _ |a Niinistö, L.
|b 6
|0 P:(DE-HGF)0
773 _ _ |a 10.1039/c0jm00363h
|g Vol. 20, p. 4207 - 4212
|p 4207 - 4212
|q 20<4207 - 4212
|0 PERI:(DE-600)1491403-7
|t Journal of materials chemistry
|v 20
|y 2010
|x 0959-9428
856 7 _ |u http://dx.doi.org/10.1039/c0jm00363h
909 C O |o oai:juser.fz-juelich.de:10419
|p VDB
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2010
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |d 31.12.2010
|g IBN
|k IBN-1
|l Halbleiter-Nanoelektronik
|0 I:(DE-Juel1)VDB799
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)120736
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-9-20110106
981 _ _ |a I:(DE-Juel1)VDB881

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