Home > Publications database > Electric field tuning of hard polar phonons in strained SrTiO3 films > print

001     10420
005     20200423202759.0
024 7 _ |a 10.1063/1.3447812
|2 DOI
024 7 _ |a WOS:000279993900117
|2 WOS
024 7 _ |a 2128/17181
|2 Handle
037 _ _ |a PreJuSER-10420
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |0 P:(DE-HGF)0
|a Skoromets, V.
|b 0
245 _ _ |a Electric field tuning of hard polar phonons in strained SrTiO3 films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2010
300 _ _ |a 124116
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |0 3051
|a Journal of Applied Physics
|v 107
|x 0021-8979
|y 12
500 _ _ |a This work was supported by the Academy of Sciences of the Czech Republic (Project No. AVOZ10100520), by its Grant Agency (Project No. A100100907), and by the Czech Science Foundation (Project No. 202/09/0682).
520 _ _ |a We investigate 100 nm thick epitaxial monolayer of SrTiO3 strained by 1% in biaxial tension and grown on (110) DyScO3. Spectra within the whole far-infrared spectral range are obtained as a function of temperature and an electric bias. An appreciable tunability of high frequency polar phonons is observed upon bias. The splitting of TO4 mode clearly observed below 220 K, which is further increased upon bias, is a signature of the ferroelectricity of the film at these temperatures. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3447812]
536 _ _ |0 G:(DE-Juel1)FUEK412
|2 G:(DE-HGF)
|a Grundlagen für zukünftige Informationstechnologien
|c P42
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |2 WoSType
|a J
700 1 _ |0 P:(DE-HGF)0
|a Kadlec, C.
|b 1
700 1 _ |0 P:(DE-HGF)0
|a Kuzel, K.
|b 2
700 1 _ |0 P:(DE-HGF)0
|a Kamba, S.
|b 3
700 1 _ |0 P:(DE-Juel1)128631
|a Schubert, J.
|b 4
|u FZJ
773 _ _ |0 PERI:(DE-600)1476463-5
|a 10.1063/1.3447812
|g Vol. 107, p. 124116
|p 124116
|q 107<124116
|t Journal of applied physics
|v 107
|x 0021-8979
|y 2010
856 7 _ |u http://dx.doi.org/10.1063/1.3447812
856 4 _ |u https://juser.fz-juelich.de/record/10420/files/1.3447812.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/10420/files/1.3447812.gif?subformat=icon
|x icon
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/10420/files/1.3447812.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/10420/files/1.3447812.jpg?subformat=icon-700
|x icon-700
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/10420/files/1.3447812.pdf?subformat=pdfa
|x pdfa
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:10420
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
913 1 _ |0 G:(DE-Juel1)FUEK412
|a DE-HGF
|b Schlüsseltechnologien
|k P42
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|v Grundlagen für zukünftige Informationstechnologien
|x 0
914 1 _ |y 2010
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
920 1 _ |d 31.12.2010
|g IBN
|k IBN-1
|l Halbleiter-Nanoelektronik
|0 I:(DE-Juel1)VDB799
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)120737
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-9-20110106
981 _ _ |a I:(DE-Juel1)VDB881

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21