TY  - JOUR
AU  - Volk, C.
AU  - Schubert, J.
AU  - Schnee, M.
AU  - Weiss, K.
AU  - Akabori, M.
AU  - Sladek, K.
AU  - Hardtdegen, H.
AU  - Schäpers, T.
TI  - LaLuO3 as high-k gate dielectric for InAs nanowire structures
JO  - Semiconductor science and technology
VL  - 25
SN  - 0268-1242
CY  - Bristol
PB  - IOP Publ.
M1  - PreJuSER-10421
SP  - 085001
PY  - 2010
N1  - Record converted from VDB: 12.11.2012
AB  - We investigated the suitability of lanthanum lutetium oxide (LaLuO3) as a gate dielectric by fabricating InAs nanowire field-effect transistors. The LaLuO3 layer was deposited by employing pulsed laser deposition. On transistors with a 1.6 mu m long gate, a maximum transconductance of 11 mu S at a source-drain bias voltage of 0.5 V was measured, while the threshold voltage had a value of -4.5V. Owing to the complete coverage of the InAs nanowire by the LuLuO3 layer no significant leakage current was found. On a transistor with a 240 nm long gate short-channel effects were observed. The transfer characteristics showed a hysteretic behavior, which is attributed to charging of states at the InAs/LaLuO3 interface. We found that the threshold voltage gets reduced considerably when the temperature was decreased to 25 K. At this temperature the hysteresis in the transfer characteristics showed no dependence on the sweep rate.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000280275800003
DO  - DOI:10.1088/0268-1242/25/8/085001
UR  - https://juser.fz-juelich.de/record/10421
ER  -