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| Hauptseite > Online First > Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene > print |
| Hauptseite > Online First > Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene > print |
| 001 | 1042705 | ||
| 005 | 20251009202053.0 | ||
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| 024 | 7 | _ | |a 1530-6984 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2025-02651 |
| 082 | _ | _ | |a 660 |
| 100 | 1 | _ | |a Rothstein, Alexander |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene |
| 260 | _ | _ | |a Washington, DC |c 2025 |b ACS Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinements, essential for the operation of single-electron transistors (SETs), and allows one to explore the interplay of confinement, electron interactions, band renormalization, and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in tBLG with well-tunable Coulomb blockade resonances. These SETs allow us to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalization crucial for future advanced gate-tunable quantum devices and circuits in tBLG including, e.g., quantum dots and Josephson junction arrays. |
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