%0 Journal Article
%A Paul, Godwin
%A Issac, Tom Glint
%A Menzel, Stephan
%A Rana, Vikas
%T Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices
%J IEEE electron device letters
%V 46
%N 9
%@ 0193-8576
%C New York, NY
%I IEEE
%M FZJ-2025-02954
%P 1537-1540
%D 2025
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001565172600035
%R 10.1109/LED.2025.3585469
%U https://juser.fz-juelich.de/record/1043650