| Hauptseite > Publikationsdatenbank > Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices > RIS |
TY - JOUR AU - Paul, Godwin AU - Issac, Tom Glint AU - Menzel, Stephan AU - Rana, Vikas TI - Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices JO - IEEE electron device letters VL - 46 IS - 9 SN - 0193-8576 CY - New York, NY PB - IEEE M1 - FZJ-2025-02954 SP - 1537-1540 PY - 2025 LB - PUB:(DE-HGF)16 UR - <Go to ISI:>//WOS:001565172600035 DO - DOI:10.1109/LED.2025.3585469 UR - https://juser.fz-juelich.de/record/1043650 ER -