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@ARTICLE{Tilgner:1043689,
      author       = {Tilgner, Niclas and Wolff, Susanne and Soubatch, Serguei
                      and Lee, Tien-Lin and Peña Unigarro, Andres David and
                      Gemming, Sibylle and Tautz, F. Stefan and Seyller, Thomas
                      and Kumpf, Christian and Göhler, Fabian and Schädlich,
                      Philip},
      title        = {{R}eversible switching of the environment-protected quantum
                      spin {H}all insulator bismuthene at the graphene/{S}i{C}
                      interface},
      journal      = {Nature Communications},
      volume       = {16},
      number       = {1},
      issn         = {2041-1723},
      address      = {[London]},
      publisher    = {Springer Nature},
      reportid     = {FZJ-2025-02987},
      pages        = {6171},
      year         = {2025},
      abstract     = {Quantum spin Hall insulators have been extensively studied
                      both theoretically and experimentally because they exhibit
                      robust helical edge states driven by spin-orbit coupling and
                      offer the potential for applications in spintronics through
                      dissipationless spin transport. Here we show that a single
                      layer of elemental Bi, formed by intercalation of an
                      epitaxial graphene buffer layer on SiC(0001), is a promising
                      candidate for a quantum spin Hall insulator. This layer can
                      be reversibly switched between an electronically inactive
                      precursor state and a bismuthene state, the latter
                      exhibiting the predicted band structure of a true
                      two-dimensional bismuthene layer. Switching is accomplished
                      by hydrogenation (dehydrogenation) of the sample. A partial
                      passivation (activation) of Si dangling bonds causes a
                      lateral shift of Bi atoms involving a change of the
                      adsorption site. In the bismuthene state, the Bi honeycomb
                      layer is a prospective quantum spin Hall insulator,
                      inherently protected by the graphene sheet above and the
                      H-passivated substrate below.},
      cin          = {PGI-3},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521) / DFG project
                      G:(GEPRIS)449119662 - FOR 5242: Proximity induzierte
                      Korrelationseffekte in niedrigdimensionalen Strukturen
                      (449119662) / SFB 1083 A12 - Struktur und Anregungen von
                      hetero-epitaktischen Schichtsystemen aus schwach
                      wechselwirkenden 2D-Materialien und molekularen Schichten
                      (A12) (385975694)},
      pid          = {G:(DE-HGF)POF4-5213 / G:(GEPRIS)449119662 /
                      G:(GEPRIS)385975694},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {40615386},
      UT           = {WOS:001523057700029},
      doi          = {10.1038/s41467-025-60440-x},
      url          = {https://juser.fz-juelich.de/record/1043689},
}