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| Hauptseite > Publikationsdatenbank > Detailed Bias‐Dependent Free Energy Loss Analysis for Proposing Device Optimization Strategies in Silicon Heterojunction Solar Cell Design > print |
| Hauptseite > Publikationsdatenbank > Detailed Bias‐Dependent Free Energy Loss Analysis for Proposing Device Optimization Strategies in Silicon Heterojunction Solar Cell Design > print |
| 001 | 1044645 | ||
| 005 | 20250825202241.0 | ||
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| 100 | 1 | _ | |a Gebrewold, Habtamu Tsegaye |0 P:(DE-Juel1)179456 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Detailed Bias‐Dependent Free Energy Loss Analysis for Proposing Device Optimization Strategies in Silicon Heterojunction Solar Cell Design |
| 260 | _ | _ | |a Weinheim |c 2025 |b Wiley-VCH |
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| 520 | _ | _ | |a A multiscale electro-optical device model is employed to investigate free energy and other losses in a silicon heterojunction (SHJ) solar cell. A finite element method-based device model is coupled with free energy loss analysis (FELA) to calculate detailed bias voltage-dependent losses in terms of mAcm-2 and mWcm-2. Such an approach provides insight into identifying possible pathways for synergetic optimization and redesigning a solar cell device in both laboratory and mass production settings. The SHJ solar cell investigated in this work demonstrates that the hole-selective contact (HSC) is responsible for a significant portion of the free energy loss. At maximum power point, a power density of ~1.6 mWcm-2 at 1 sun is lost associated with carrier transport in HSC and recombination at both selective contacts. This results in a 1.6% absolute loss in power conversion efficiency (PCE). Auger recombination in the wafer limits the open-circuit voltage. The FELA suggests a pathway for synergistic optimization of the device to regain a significant portion of the ~2.6% absolute loss in PCE. Simultaneously adjusting the conductivity of a-Si layers in HSC and the concentration of free majority carriers in the wafer can improve the fill factor (FF) to ~87% and PCE close to 26%. |
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| 700 | 1 | _ | |a Ding, Kaining |0 P:(DE-Juel1)130233 |b 4 |e Corresponding author |u fzj |
| 773 | _ | _ | |a 10.1002/solr.202500311 |g p. 202500311 |0 PERI:(DE-600)2882014-9 |n 15 |p 202500311 |t Solar RRL |v 9 |y 2025 |x 2367-198X |
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