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@ARTICLE{Peng:1044673,
      author       = {Peng, Zijian and Wortmann, Jonas and Hong, Jisu and Zhou,
                      Shuyu and Bornschlegl, Andreas J. and Haffner-Schirmer,
                      Julian and Corre, Vincent M. Le and Heumüller, Thomas and
                      Osvet, Andres and Rand, Barry P. and Lüer, Larry and
                      Brabec, Christoph J.},
      title        = {{L}ocating {N}on‐{R}adiative {R}ecombination {L}osses and
                      {U}nderstanding {T}heir {I}mpact on the {S}tability of
                      {P}erovskite {S}olar {C}ells {D}uring {P}hoto‐{T}hermal
                      {A}ccelerated {A}geing},
      journal      = {Advanced energy materials},
      volume       = {15},
      number       = {35},
      issn         = {1614-6832},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2025-03322},
      pages        = {2502787},
      year         = {2025},
      abstract     = {Commercialization of perovskite solar cells (PSCs) requires
                      further breakthroughs in stability, but the complex
                      degradation mechanisms and the interplay of the underlying
                      stress factors complicate insight-driven improvement of
                      long-term stability. This study establishes a quantitative
                      link between potential degradation—specifically
                      open-circuit voltage (VOC) and quasi-Fermi level splitting
                      (QFLS)—and the photo-thermal stability of PSCs. It is
                      highlighted that an increase in non-radiative recombination
                      losses induces the seemingly negligible decrease in VOC and
                      QFLS, though it causes a significant decrease in fill factor
                      (FF) and/or short circuit current (JSC) instead, leading to
                      an overall performance decline. By combining non-destructive
                      photoluminescence imaging and drift-diffusion simulations,
                      it is revealed that during photo-thermal ageing, unstable
                      low-dimensional passivation fails within tens of hours,
                      generating bulk defects, while unstable hole-transport-layer
                      contacts induce interface defects within hours. Building on
                      these findings, a robust hole-transport-layer polymer
                      interface is employed and enhanced perovskite crystal
                      quality to suppress both interface and bulk defect
                      generation during ageing, achieving a T80 lifetime exceeding
                      1000 h under accelerated ageing conditions (85 °C and
                      two-sun illumination).},
      cin          = {IET-2},
      ddc          = {050},
      cid          = {I:(DE-Juel1)IET-2-20140314},
      pnm          = {1213 - Cell Design and Development (POF4-121) / 1214 -
                      Modules, stability, performance and specific applications
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(DE-HGF)POF4-1214},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001524906500001},
      doi          = {10.1002/aenm.202502787},
      url          = {https://juser.fz-juelich.de/record/1044673},
}