TY  - JOUR
AU  - Hader, Fabian
AU  - FUCHS, FABIAN
AU  - Fleitmann, Sarah
AU  - Havemann, Karin
AU  - SCHERER, BENEDIKT
AU  - Vogelbruch, Jan
AU  - Geck, Lotte
AU  - Waasen, Stefan van
TI  - Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams
JO  - IEEE transactions on quantum engineering
VL  - 6
SN  - 2689-1808
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2025-03407
SP  - 5500414 
PY  - 2025
AB  - Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges. Therefore, to fully automate qubit tuning, it is necessary to recognize these edges automatically and reliably. This article investigates possible detection methods, describes their training with simulated data from the SimCATS framework, and performs a quantitative comparison with a future hardware implementation in mind. Furthermore, we investigated the quality of the optimized approaches on experimentally measured data from a GaAs and a SiGe qubit sample.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001569673100001
DO  - DOI:10.1109/TQE.2025.3596392
UR  - https://juser.fz-juelich.de/record/1044873
ER  -