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| 001 | 1046031 | ||
| 005 | 20250909202257.0 | ||
| 024 | 7 | _ | |a 10.29363/nanoge.hopv.2025.078 |2 doi |
| 037 | _ | _ | |a FZJ-2025-03671 |
| 100 | 1 | _ | |a Majewski, Martin |0 P:(DE-Juel1)187003 |b 0 |u fzj |
| 111 | 2 | _ | |a 12º nternational Conference on Hybrid and Organic Photovoltaics |c Roma |d 2025-05-12 - 2025-05-14 |w Italy |
| 245 | _ | _ | |a Simulation of the impact of processing conditions for solution-processed thick perovskite layers |
| 260 | _ | _ | |c 2025 |b FUNDACIO DE LA COMUNITAT VALENCIANA SCITO València |
| 295 | 1 | 0 | |a Proceedings of the International Conference on Hybrid and Organic Photovoltaics - FUNDACIO DE LA COMUNITAT VALENCIANA SCITO València, 2025. - ISBN - doi:10.29363/nanoge.hopv.2025.078 |
| 300 | _ | _ | |a - |
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| 520 | _ | _ | |a Fabricating thick (1000 nm) solution-processed perovskite layers is expected to increase the efficiency of carbon-contact-based solar cells compared to thinner (500 nm) films. However, increasing only the deposited layer thickness often results in buried voids inside the dry film. This is detrimental to the efficiency of the device. Recently, we have developed a theoretical framework based on Phase Field simulations[1]. It is capable of describing the main physical processes determining the morphology: evaporation, diffusion, spontaneous nucleation, crystal growth, and advection[2]. With the help of the simulations, it is possible to explain why voids form in the film. The crystals nucleate at random spots inside the liquid film. The movement of the condensed-vapor interface, due to evaporation, leads to an agglomeration of the crystals at the film surface. The crystals block further evaporation and the remaining solvent is the origin of the buried voids inside the dry film. We explain how adding seeds on the substrate before coating the thick film can prevent this. In this case, processing conditions have to be modified compared to standard operating procedures for thin films. The theoretical expectations can be verified experimentally, leading to a performance improvement of the devices. |
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| 700 | 1 | _ | |a Qiu, Shudi |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Ronsin, Olivier J. |0 P:(DE-Juel1)173965 |b 2 |u fzj |
| 700 | 1 | _ | |a Du, Tian |0 P:(DE-Juel1)200304 |b 3 |u fzj |
| 700 | 1 | _ | |a Egelhaaf, Hans-J. |0 P:(DE-Juel1)190193 |b 4 |
| 700 | 1 | _ | |a Brabec, Christoph |0 P:(DE-Juel1)176427 |b 5 |
| 700 | 1 | _ | |a Harting, Jens |0 P:(DE-Juel1)167472 |b 6 |u fzj |
| 773 | _ | _ | |a 10.29363/nanoge.hopv.2025.078 |
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