TY  - CONF
AU  - Ihsan, Ahmad Zainul
AU  - Fathalla, Said
AU  - Sandfeld, Stefan
TI  - DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials
PB  - ACM New York, NY, USA
M1  - FZJ-2025-03724
SP  - 1746 - 1753
PY  - 2023
AB  - Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.
T2  - SAC '23: 38th ACM/SIGAPP Symposium on Applied Computing
CY  - 27 Mar 2023 - 31 Mar 2023, Tallinn (Estonia)
Y2  - 27 Mar 2023 - 31 Mar 2023
M2  - Tallinn, Estonia
LB  - PUB:(DE-HGF)8
UR  - <Go to ISI:>//WOS:001124308100245
DO  - DOI:10.1145/3555776.3578739
UR  - https://juser.fz-juelich.de/record/1046188
ER  -