Contribution to a conference proceedings

FZJ-2025-03724

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials

Ihsan, A. Z.FZJ* ; Fathalla, S.FZJ* ; Sandfeld, S. (Corresponding author)FZJ*

2023
ACM New York, NY, USA

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Please use a persistent id in citations: doi:10.1145/3555776.3578739

Abstract: Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.

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Contributing Institute(s):

1. Materials Data Science and Informatics (IAS-9)

Research Program(s):

1. 5111 - Domain-Specific Simulation & Data Life Cycle Labs (SDLs) and Research Groups (POF4-511) (POF4-511)

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